IKP15N60T_ Power device _IGBT- Insulated gate bipolar transistor

600V, 15A discrete IGBT with reverse parallel diode in TO220 package

The hardswitch 600V, 15A Trench Digger ™ IGBT3 is used in conjunction with the full continuous diode in the TO220 package, resulting in significant improvements in both static and dynamic performance due to the combination of the groove element and the field resistance concept. The combination of IGBT with a soft recovery emitter control diode further minimizes conduction losses. Due to the best compromise between switching loss and conduction loss, the highest efficiency is achieved.

IKP15N60T_ Power device _IGBT- Insulated gate bipolar transistor

Character description

Minimum VCEsat pressure drop reduces conduction losses
Low switching loss
Because of the positive temperature coefficient in VCEsat, easy to switch in parallel
Very soft, fast recovery reverse parallel emitter control diode
High strength, stable temperature
Low EMI emission
Low gate charge
Very tight parameter distribution

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